MOSFET 2N-CH 30V 40A LFPAK56D BUK7K5R6-30E,115
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Description:
MOSFET 2N-CH 30V 40A LFPAK56D
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, TrenchMOS™
DataSheet
BUK7K5R6-30E,115(FET, MOSFET)ByNexperiaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5033,Price reference "real-time change" China/Hongkong。 BUK7K5R6-30E,115 package/specs, Download BUK7K5R6-30E,115、Datasheet。